III-Nitrides Epitaxy Service

We can support you with our expertise in epitaxy for any III-Nitride device, optoelectronics and electronics

Based on our large experience in III-Nitride growth we can design with you the epitaxial structure that will fit the best your requirements.

NOVAGAN can produce atomically engineered layers of any III-Nitride alloys: InGaN, AlGaN, AlInN and AlGaInN.

Our epiwafers includes GaN-on-Sapphire, GaN-on-Si, GaN-on-SiC and GaN-on-GaN.

InGaN LEDs Epiwafers

High efficiency epiwafers from UV and over the full visible range. Complete customization of the LED is possible.

2” and 4” wafer available: LED-on-sapphire, LED-on-Si, and LED-on-GaN

We can grow state-of-the-art Laser Diodes structures using our highly optimized alloys and your most advanced design.

Available wavelengths range from 385nm up to >500nm.

We supply optimized HEMT structures with AlGaN and AlInN barriers.

Available on SiC, Silicon, GaN and sapphire substrates.

Lattice-matched AlInN/GaN heterostructures are available on sapphire, silicon and GaN for many applications in optoelectronics: